CETC Tier-1 distributor Jarwey｜650V and 900V SiC: the 250 mΩ cover on WM3HA330090E is the 18 V typical
Jarwey is a tier-1 distributor of SiC power devices from CETC Guiji Nanfang (55th Research Institute). CETC is the group mark; Guiji Nanfang is the subsidiary. Datasheets, shortlists, samples, and lead time sit with Jarwey.
The front page of each G3 TO-252-2L datasheet prints one RDS(on). WM3HA300065E (650 V, page 869) shows 300 mΩ and ID at 25°C = 10 A. WM3HA330090E (900 V, page 868) shows 250 mΩ and 12.5 A. Both PDFs are marked Version 3.0. Sorting those two cover lines puts the 900 V part ahead on resistance. The electrical table uses a different gate voltage for each cover figure.
On WM3HA300065E, 300 mΩ is the typical RDS(on) at VGS = 15 V, ID = 5 A, TJ = 25°C (maximum 420 mΩ). On WM3HA330090E, 250 mΩ is the typical value at VGS = 18 V, ID = 5 A (maximum 325 mΩ). At 15 V the 900 V part is 330 mΩ typical and 430 mΩ maximum. The product pages already split 15 V and 18 V. The cover line does not name the gate voltage.
Hold the gate voltage fixed and the 18 V typical is 250 mΩ on both devices. The 18 V maximums are 350 mΩ (650 V) and 325 mΩ (900 V). A 650 V versus 1200 V bus note, the 1200 V G2/G3 note, the L/K/N suffix note, and the WM3HA160065E flyback clamp and TO-252 thermal note stay on their own pages.
Cover line against the electrical table
| Reading | WM3HA300065E · 650 V | WM3HA330090E · 900 V | How to use it |
|---|---|---|---|
| Cover RDS(on) | 300 mΩ | 250 mΩ | Gate voltage is absent on the cover |
| RDS typ / max, 15 V, 5 A, 25°C | 300 / 420 mΩ | 330 / 430 mΩ | Same column as the 650 V cover |
| RDS typ / max, 18 V, 5 A, 25°C | 250 / 350 mΩ | 250 / 325 mΩ | Same column as the 900 V cover; typicals match |
| RDS typical at 175°C, 15 V / 18 V | 370 / 305 mΩ | 355 / 275 mΩ | Those four cells leave maximum blank |
| Cover ID at 25°C | 10 A | 12.5 A | 15 V continuous current, and 18 V continuous current |
| ID at 15 V, 25°C / 100°C | 10 A / 7 A | 11 A / 7.8 A | Use the 100°C row once the case is hot |
| ID at 18 V, 25°C / 100°C | 11 A / 8 A | 12.5 A / 9 A | The 900 V cover current sits here |
| RθJC typical; PD at Tc=25°C, TJ=175°C | 2.82 °C/W; 53 W | 3.5 °C/W; 43 W | Thermal path is separate from the cover milliohms |
| QG typical | 6.3 nC; VGS 0/15 V; VDS 400 V; ID 5 A | 6.3 nC; VGS −5/15 V; VDS 600 V; ID 5 A | Same charge, different swing and drain voltage |
| RG(int) typical | 12 Ω | 19 Ω | Add this to the external gate resistor |
Threshold matches on both: VGS(th) is 2.4 / 3.2 / 4.0 V (min / typ / max) at ID = 1.4 mA, and 2.4 V typical at 175°C. Coss is taken at different drain bias: 10.5 pF typical at 400 V on the 650 V part, 11.5 pF typical at 600 V on the 900 V part. Those two picofarad cells are separate test points.
The gate window matches as well. Features list 15 V / 0 V VGS, compatible with most flyback controllers. Recommended VGSop is −5…0 / +15…+18 V. Absolute maximum is −10 / +23 V. That window still leaves bus voltage, temperature rise, and the datasheet maximums to check on the board.
The application lines differ. The 650 V datasheet names solar and UPS inverters, on-board chargers, high-voltage DC/DC, SMPS, load switches, and display lighting. The 900 V datasheet names PFC, SMPS, high-voltage DC/DC, adapters, and display lighting. Package is TO-252-2L and generation is G3 on both, suffix E. L, K, and N, and the G2 versus G3 split, belong to the 1200 V articles.
Checklist before the shortlist locks
- Pair the cover RDS(on) with its gate column. 300 mΩ is the 15 V typical on the 650 V part. 250 mΩ is the 18 V typical on the 900 V part.
- Compare one gate voltage at a time. At 15 V, 5 A, 25°C the pairs are 300/420 mΩ and 330/430 mΩ. At 18 V both typicals are 250 mΩ, with maximums 350 mΩ and 325 mΩ.
- Keep the 175°C typicals in their own row. 370 mΩ and 355 mΩ at 15 V; 305 mΩ and 275 mΩ at 18 V. A room-temperature ratio does not carry those cells.
- Read the cover current with the same gate voltage. 10 A is the 650 V device at 15 V and 25°C. 12.5 A is the 900 V device at 18 V and 25°C. At 100°C case temperature, use the next line in the table.
- Thermal. Typical RθJC is 2.82 °C/W and 3.5 °C/W. PD is 53 W and 43 W at Tc = 25°C, TJ = 175°C.
- Gate charge. QG typical is 6.3 nC on both. The 650 V swing is 0/15 V at VDS = 400 V. The 900 V swing is −5/15 V at VDS = 600 V. Typical RG(int) is 12 Ω and 19 Ω.
- Revision. The PDFs on the product pages are Version 3.0. Send bus voltage, gate drive, and case temperature to Jarwey before the BOM freezes. The 15 V / 0 V feature is a drive note; a board-level swap still needs its own check.
Datasheet and enquiry
- Products: WM3HA300065E · WM3HA330090E
- PDFs: WM3HA300065E.pdf · WM3HA330090E.pdf
Equivalent-spec wafer die available for order.
Send the bus, the gate drive, and the conduction-loss target to Jarwey: kerry.w@jarwey.cn · Contact.
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