CETC Tier-1 distributor Jarwey｜650V SiC or 1200V SiC MOSFET: WM3HA300065E vs WM2HA020120L by DC bus

Jarwey is a Tier-1 distributor of SiC power devices from CETC Guiji Nanfang (55th Institute). CETC is the group mark; Guiji Nanfang is the subsidiary unit. Selection support, datasheets, samples, and lead time go through Jarwey.

A SiC MOSFET shortlist fails when the DC bus and the gate rail are still one sentence. For a roughly 400 V bus and about 10 A in a mid-power switch, open the 650 V G3 part WM3HA300065E (TO-252-2L). Its datasheet states 15 V / 0 V compatibility with most flyback controllers. For a roughly 700–800 V bus and tens of amperes in a PV, storage, or OBC high-voltage stage, open the 1200 V G2 part WM2HA020120L (TO-247-4, recommended gate −5 V / +18 V, Kelvin source pin). They are not the same power stage and not a footprint swap.

The silicon-superjunction 15 V / 0 V comparison, the flyback clamp and TO-252 thermal note, and the WM2HA020120L PV/industrial inverter checklist already exist. This page does not rewrite them. Electrical limits follow the datasheet. If the product page has no PDF, ask Jarwey for the datasheet.

The photo is WM2HA020120L in TO-247-4 only. The 650 V and 900 V parts are TO-252-2L; a through-hole picture is not used in their place.

Write the bus peak, then pick VDS

A three-phase 380 V rectifier sits near 540 V DC before surge. That is not the single-phase PFC 400 V case, so do not land it on the 650 V part by habit. Margin comes from the datasheet and the project insulation spec; this note does not publish a universal percent. The smaller flyback TO-252 device is WM3HA160065E (650 V / 160 mΩ / 20 A); clamp and thermal budget stay in the flyback article. Bridge-level checks for the 1200 V part stay in the inverter checklist. The superjunction comparison is here and does not transfer to WM2HA020120L.

The fourth lead on TO-247-4 is the driver source. It keeps power current from modulating gate voltage through common-source inductance. Return the gate loop on that pin and run load current on the power source. Layout rules follow the datasheet Jarwey supplies. Product pages list about 6.3 nC typical QG for the 650 V and 900 V parts. This page does not fill in a gate-charge number for the 1200 V part.

Checklist before you freeze a part number

1. Bus peak: record the maximum DC voltage including surge. Near 400 V, open WM3HA300065E. If 650 V margin is already tight and current is still mid-power, open WM3HA330090E. Near 700–800 V, open WM2HA020120L.
2. Current: the TO-252 parts are about 10 A and 11 A at 25°C with a 15 V gate. The 1200 V part is 100 A at 25°C. Do not parallel the TO-252 devices into an inverter leg; paralleling is outside this page.
3. Gate rail: discuss dropping the negative supply only where the datasheet states 15 V / 0 V. On a half-bridge, the same product pages still ask for a Miller and layout check, and for negative bias or an active Miller clamp when needed. Design WM2HA020120L at −5 V / +18 V.
4. Package: TO-252-2L and TO-247-4 do not share a footprint. The fourth pin is not a no-connect.
5. Kelvin source: keep the driver return and the power source apart at the package. Whether a remote short is allowed is a datasheet item, not a default in a cross-reference.
6. Leave older articles on their own question: superjunction replacement, the three adoption thresholds, flyback clamp and TO-252 heat, and the eight-step 1200 V inverter list.
7. Samples: datasheet, small lots, and lead time through Jarwey. Equivalent-spec wafer die available for order.

Datasheets and contact

• WM3HA300065E 650 V SiC MOSFET
• WM3HA330090E 900 V SiC MOSFET
• WM2HA020120L 1200 V SiC MOSFET

Jarwey · CETC SiC Tier-1 distributor · kerry.w@jarwey.cn · Contact.

Equivalent-spec wafer die available for order.