CETC Tier-1 distributor Jarwey｜650V SiC MOSFET: WM3HA160065E cover 160 mΩ is the 15 V typical
Jarwey is a tier-1 distributor of SiC power devices from CETC Guiji Nanfang (55th Research Institute). Selection notes, datasheets, samples, and lead time sit with Jarwey. CETC is the group mark; Guiji Nanfang is the unit under it.
On a 650 V SiC MOSFET the cover RDS(on) is not read the same way as on the 900 V part. WM3HA160065E prints 160 mΩ on the cover. In datasheet Version 3.0 that cell is the typical value at VGS = 15 V, ID = 7 A, TC = 25°C, with a 220 mΩ maximum. The 18 V row at the same current is 130 mΩ typical / 180 mΩ maximum. WM3HA300065E prints 300 mΩ, and that number is the 15 V typical at ID = 5 A. Its 18 V typical is 250 mΩ.
WM3HA330090E is the other case: the cover 250 mΩ is the 18 V typical. That split is already in the 650 V versus 900 V cover note. Clamp, body diode, and TO-252 thermal path for the flyback case stay in the earlier thermal note. This page only places the cover milliohm on the correct gate-voltage row.
Which row the cover milliohm belongs to
Unless a row says otherwise, the electrical-characteristics conditions are TC = 25°C. Leave a blank maximum blank. Do not paste the 25°C maximum into the 175°C cell.
| Part | Cover RDS(on) | Row that matches the cover | Other gate voltage at 25°C | 15 V, 175°C typical |
|---|---|---|---|---|
| WM3HA160065E | 160 mΩ | 15 V, ID=7 A: 160 typ / 220 max mΩ | 18 V, ID=7 A: 130 typ / 180 max mΩ | 210 mΩ, max cell blank |
| WM3HA300065E | 300 mΩ | 15 V, ID=5 A: 300 typ / 420 max mΩ | 18 V, ID=5 A: 250 typ / 350 max mΩ | 370 mΩ, max cell blank |
| WM3HA330090E (pointer only) | 250 mΩ | 18 V typical, not 15 V | 15 V typical 330 mΩ | see the earlier note |
Both 650 V features lists include 15 V / 0 V compatibility with most flyback controllers. That line means a 15 V gate swing is the condition to evaluate. It does not move the cover milliohm onto the 18 V row. A conduction-loss sheet that uses 130 mΩ or 250 mΩ while the driver is at 15 V understates loss.
Cover current is not the RDS(on) test current
| Part | Cover ID at 25°C | Continuous-current cell it matches | Current in the RDS(on) row |
|---|---|---|---|
| WM3HA160065E | 20 A | 20 A at VGS=15 V, TC=25°C; 21 A at 18 V, 25°C | 7 A, not 20 A |
| WM3HA300065E | 10 A | 10 A at VGS=15 V, TC=25°C; 11 A at 18 V, 25°C | 5 A, not 10 A |
Absolute gate limits are −10 V / +23 V. Recommended operation is −5…0 V / +15…+18 V. Continuous current falls again at TC = 100°C: 14 A on WM3HA160065E at 15 V, 7 A on WM3HA300065E at 15 V. Both are TO-252-2L, G3.
Seven checks before the loss sheet
- Gate row first. Cover milliohms on WM3HA160065E and WM3HA300065E are 15 V typicals. Do not reuse the WM3HA330090E rule that the cover number is the 18 V typical.
- Test current next. 7 A for the 160 mΩ row, 5 A for the 300 mΩ row. The cover ampere rating is a different cell.
- Keep max beside typ. At 15 V the maxima are 220 mΩ and 420 mΩ. A typical-only budget hides the production spread.
- 175°C is its own row. 15 V typicals are 210 mΩ and 370 mΩ, and the maximum cells are blank.
- Use the 18 V row only when the driver is at 18 V. Then the typicals are 130 mΩ and 250 mΩ, with maxima 180 mΩ and 350 mΩ.
- 15 V / 0 V is an evaluation note. Still match the controller swing and the off level. It is not a drop-in swap.
- Revision. Figures above are Version 3.0. Ask Jarwey for a later PDF rather than inventing a second set of numbers.
Product pages and PDFs
- WM3HA160065E (650 V / cover 160 mΩ / TO-252-2L) · datasheet
- WM3HA300065E (650 V / cover 300 mΩ / TO-252-2L) · datasheet
- 900 V contrast: WM3HA330090E
Equivalent-spec wafer die available for order.
Send bus voltage, the gate drive you actually use (15 V or 18 V), and the current point to Jarwey: kerry.w@jarwey.cn · Contact.
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