GaN Tier-1 distributor Jarwey｜650V: TP65H150G4PS is measured at 10 V, WM3HA160065E wants 15 V / 0 V

Jarwey is a Tier-1 channel for these GaN power devices and can support selection, datasheets, samples, and lead time.

At 650 V, an adapter SuperGaN FET and a flyback SiC MOSFET can both be quoted near 150 mΩ. The test points are not the same. TP65H150G4PS lists 150 mΩ typical and 180 mΩ maximum at V_GS = 10 V, I_D = 10 A, 25°C. WM3HA160065E lists 160 mΩ typical and 220 mΩ maximum at V_GS = 15 V, I_D = 7 A. The SiC MOSFET’s recommended gate window is +15 to +18 V on, 0 to −5 V off.

This note is that comparison only. Turn-off at 0 V, gate resistors, ferrite beads, and switching-time setups for the three SuperGaN FETs are in the 6 October gate-loop note. The 35/50 mΩ totem-pole split and the adapter checklist stay where they were published.

Two parts near 150 mΩ, two bias points

TP65H035G4WS and TP65H050G4WS also list R_DS(on) at V_GS = 10 V (35 mΩ and 50 mΩ typical). Their current split stays in the totem-pole note. Do not extend this table into their gate network.

Do not rank 150 mΩ against 160 mΩ

The typical values differ by about 10 mΩ and were taken at 10 V / 10 A versus 15 V / 7 A. At V_GS = 18 V the SiC typical falls to 130 mΩ. That is still not a basis for an unverified swap against the 10 V GaN number. On the GaN FET, the same 10 V bias rises to 307 mΩ typical at 150°C, so the hot point stays on its own line.

The driver rail follows the device. A 10 V to 12 V turn-on used for SuperGaN is not yet the +15 to +18 V window on WM3HA160065E. A negative turn-off laid out for SiC does not land on this cascode by default; 0 V turn-off and the gate resistor stay in the 6 October note. A low-side driver with one positive rail versus a 1200 V MOSFET at −5 V / +18 V is a separate question: COS4421SR and WM2HA020120L.

Where the other notes start

• Adapters, low-power SMPS, lighting: TP65H150G4PS adapter note. Those seven checks are not copied here.
• Bridgeless totem-pole: TP65H035 / TP65H050.
• Flyback clamp, body diode, and the TO-252 thermal path: WM3HA160065E flyback note.
• The PFC freewheel socket is a SiC Schottky, not either switch. See WS4A020065K / WS4A020065A (7 / 8).

Six checks before layout

1. Match the test point: compare only at the same V_GS, current, and temperature. 150 mΩ at 10 V / 10 A versus 160 mΩ at 15 V / 7 A is not a result.
2. Turn-on amplitude: this GaN FET’s on-resistance row is at 10 V. The SiC MOSFET wants +15 to +18 V. Confirm whether a 10 V to 12 V GaN driver rail can actually deliver 15 V or 18 V.
3. Turn-off level: WM3HA160065E’s recommended window includes 0 to −5 V. SuperGaN is laid out for 0 V off. Do not bolt the negative rail straight across. Gate resistor and bead values stay in the 6 October note.
4. Package: TO-220 versus TO-252-2L. Hole pitch, insulation, and heatsink are not common. P_D and I_D in the table each keep their own conditions.
5. Dynamic R_DS(on) and revision: TP65H150 production-tests dynamic on-resistance. Use the 307 mΩ typical at 150°C. The SiC MOSFET is Version 3.0. Read the PDF on the product page before ordering.
6. Samples: datasheets download from the product pages. For a filed revision, samples, or lead time, contact Jarwey and freeze the BOM after the bench result.

Datasheets and samples

• TP65H150G4PS
• WM3HA160065E
• Same voltage family, not expanded in this table: TP65H035G4WS · TP65H050G4WS

Equivalent-spec wafer die for the SiC MOSFET is available to order.

Jarwey · kerry.w@jarwey.cn · Contact.